What is an IGBT power module?

IGBT stands for an insulated-gate bipolar transistor. The device is used for a power transistor that combines an input MOS and an output bipolar transistor. The IGBT, for short, a comibnation between a conventional Bipolar Junction Transistor (BJT) and a Field Effect Transistor (MOSFET), being ideal as a semiconductor switching device.

IGBTs helps in the switching the devices in the inverter circuit for driving of the small to large motor. IGBTs for the inverter applications are commonly used in home appliances such as air conditioners and refrigerators, industrial engines, and automotive main motor controllers to improve efficiency.

An IGBT is a power semiconductor die and is the short form of the insulated-gate bipolar transistor. An IGBT power module is an assembly and physical packaging of several IGBT power semiconductors in one package.

The core function of power modules is to perform motor power switching and amplification in electric variable-speed and servo drives. Some power modules integrate capabilities and intelligence well beyond these essential functions. They simplify motor drive design via low parts count, compactness, and reliability.

The IGBT Transistor takes the parts of standard transistors, the high input of the impedance and high switch speeds of a MOSFET, with the low saturation voltage of a bipolar transistor, and combines them to produce another type of transistor switching device that is capable of handling large collector-emitter currents with virtually zero gates current drive.

Standard IGBT

The Insulated Gate Bipolar Transistor has the insulated gate technology of the MOSFET with the output performance of the characteristics of a conventional bipolar transistor and has the charqcteristics of a bipolar transitor and is voltage controlled like a MOFSET.

IGBTs are mainly used in everyday power electronics applications, such as inverters, converters, and power supplies, where the demands of the solid state switching device are not fully met by power bipolar and power MOSFETs.

IGBT Characteristics

The IGBT is a voltage-controlled device and it requires a small voltage on the Gate to maintain conduction through the machine, unlike BJT, which requires that the Base current is continuously supplied sufficiently to maintain the saturation.

The IGBT is an unidirectional device and can only switch current in the “forward direction,” from Collector to Emitter, unlike MOSFET, which has bi-directional current switching capabilities.

The principal operation and Gate drive circuits for the insulated gate bipolar transistor are very similar to that of the N-channel power MOSFET. The fundamental difference is that the resistance the main conducting channel offers when current flows through the device in its “ON” state is much smaller in the IGBT. The main advantage of using the Insulated Gate Bipolar Transistor over other types of transistor devices are its high voltage capability, low ON-resistance, ease of drive, relatively fast switching speeds, and combined with zero Gate drive current, makes it a good choice for moderate pace, high voltage applications such as in pulse-width modulated (PWM), variable speed control, switch-mode power supplies or solar powered DC-AC inverter and frequency converter applications operating in the hundreds of kilohertz range.

Its lower on-state resistance, conduction losses, and ability to switch high voltages at high frequencies without damage make the Insulated Gate Bipolar Transistor ideal for driving inductive loads such as coil windings, electromagnets, and DC motors.

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